Small temperature change magnetic field Hall effect test system with variable temperature and variable magnetic field and manual probe module, variable temperature range of -196 degrees to +600 degrees, temperature platform 22mm diameter, with observation window can be observed samples and can be equipped with an external Optical irradiation 0.4T / 1.5T electromagnetic range adjustable (distance related), can be controlled by system software Variable temperature magnetic field joint test Equipped with a dedicated manual probe module, including a small integrating sphere and two adjustable probe holder, Comes with a small spectrometer module, you can choose with the source table and software (additional configuration required), the measured samples for electrical and optical performance testing.
System Function Measure the semiconductor's resistivity, carrier concentration, mobility and their temperature change curve, Hall coefficient, magnetoresistance, etc.
System configuration Hall effect test host, temperature platform and thermostat and liquid nitrogen tank, permanent magnet and switching controller
The measured sample size range standard 10mm * 10mm
Variable temperature sample table size 53.5mm * 43mm maximum
Variable temperature range -196 ° C to 600 ° C
Temperature stability 0.01 ° C
Minimum temperature change rate 0.01 ° C / min
Maximum temperature change rate 50 ° C / min
Testable semiconductor material Semiconductor alloy thin films (P-type and N-type) of Si, SiGe, SiC, ZnO, GaAs, InGaAs, InP, GaN,
Magnetic field strength 0.4T / 1.5T distance, typical, permanent magnet, manual magnet polarity change
Magnetic field stability ± 5%
Head diameter 40mm, effective area, 10mm
Pole space 5-30mm
Hall voltage range 10uV-10V
Hall voltage resolution 1uV, typical 500nV
Input impedance 1e13 ohm
Current range 1nA-10mA
The maximum current resolution of 25pA
Resistance test range 1m ohm-100M ohm (typical)
Resistivity range (1um thickness) 10-5 to 107 ohm-cm (typical)
The carrier concentration is 105 to 1020 cm-3
