SCI-DUV Reflection and Transmission Spectrophotometry

  • Product No:FilmTek™ 3000M
  • Manufacturer:Scientific Computing International

Micro-spot size Reflection and Transmission Spectrophotometry

Reflection and Transmission Spectrophotometry for film thickness measurement

The FilmTek™ 3000M combined reflection-transmission metrology system was developed for efficient and accurate measurement of patterned films deposited on transparent substrates. The FilmTek™ 3000M utilizes allows for a small spot size down to 2 µm, and can be equipped with a large custom stage for flat panel display applications.

Conventional optical metrology systems which utilize a high power objective for sub-15µm spot measurements are prone to significant signal degradation and optical artifacts, limiting their use for patterned samples, non-uniform films, and thick films. The patented optical design of FilmTek™ 3000M maintains high signal fidelity even during small spot measurements by allowing for a sub-10µm spot with a low power objective. Avoiding the use of a high power objective is critical for limiting the angular spectrum of the collected light and maximizing the coherence of both spectral reflection and transmission.

FilmTek™ 3000M capabilities can be expanded to perform fully-automated imaging-based critical dimension (CD) measurement of patterned samples. This option allows for simultaneous CD and film thickness measurement.

FilmTek™ 3000M is a fully-integrated package, with advanced material modeling software to make even the most rigorous of measurement tasks reliable and intuitive.

Key Features:

  • Spectroscopic reflection
  • Spectroscopic transmission
  • 5nm to 350µm film thickness range
  • 2µm spot size (5×10µm standard)
  • Automated stage with autofocus
  • Camera for imaging measurement location
  • Pattern recognition

Measurement Capabilities:

FilmTek™ 3000M incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Critical dimension (CD) measurement

Optional Features:

  • Automated flat panel/wafer handling
  • Flat panel total thickness variation (TTV) measurement
  • SECS/GEM


  • Technical Specifications
    Film thickness range:5nm to 350µm (5nm to 150µm is standard)
    Film thickness accuracy:±1.5Å for NIST traceable standard oxide 1000Å to 1µm
    CD precision (1σ):<0.2%
    Spectral range:380nm to 1700nm ( 380nm to 1000nm is standard)
    Measurement spot size:2µm (5×10µm standard with 10x objective)
    Sample size:2mm to 600mm (150mm is standard)
    Spectral resolution:0.3-2nm
    Light source:Regulated halogen lamp (2,000 hrs lifetime)
    Detector type:2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
    Computer:Multi-core processor with Windows™ 7 Operating System
    Measurement time:<1 sec per site (e.g., oxide film)

     

    Performance Specifications
    Film(s)ThicknessMeasured ParametersPrecision (1σ)
    Oxide / Si50-1000 nmt0.025 nm
    1-150 µm
    t0.005%