ENERGi - In-line ion implant system, best suited for Bifacial, n-TOPCON, IBC and PERC (selective emitter) solar cell technologies.
Applications for ENERGi include:
• Blanket homogeneous n- and p-type doping.
• Patterned n- and p-type doping.
• B ion implantation for Selective Emitter provides a performance advantage over other methods.
· Single pass under a continuous flux ion source
· Fast beam tuning for dose control and dopant profile
· Excellent dose uniformity and distribution control
· Boron and phosphorous implanting capabilities
· Horizontal processing of substrate sizes of 166mm square. Larger wafer sizes easily accommodated.
· The ENERGi has been proven in production to delivers an absolute >1% improvement in cell efficiency over diffusion doping.
· Industry leading throughput – 3000 disks per hour
· Industry leading uptime - > 90%
· Lowest Cost Of Ownership (COO)
