TRd系列是一款針對大功率IGBT/MOSFET 器件和晶片的動態特性測試系統，覆蓋8000A/10000V以內的模快測試，短路電流高達14000A, 200度高溫平臺, 測試標準遵循IEC 60747-9 edition 2.0 for IGBT, IEC 60747-8 edition 3.0 for MOSFET,IEC 60747-2 edition 3.0 for DIODE
動態電流：6000A
動態電壓6000V
測試項目
Single pulse RBSOA
Double pulse RBSOA
Turn ON on inductive load
Turn OFF on inductive load
QRR on Free Wheeling Diode
Short-circuit SCSOA1
Qg
EAS
模組類型：單管，半橋，全橋，PIM，三電平
